fast recovery diod e rf101l2s ? applications ? dimensions (unit : mm) general rectification ? features 1)small power mold type. (pmds) 2)ultra low v f 3)ultra high switching speed 4)low switching loss ? construction silicon epitaxial ? structure ? taping dimensions (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions forward voltage v f - 0.815 0.87 v i f =1.0a i r - 0.01 10 av r =200v reverse recovery time trr - 12 25 ns i f =0.5a,i r =1a,irr=0.25*i r reverse current ? land size figure (unit : mm) storage temperature ? 55 to ? 150 (*1)mounted on epoxy board. 180half sine wave parameter forward current surge peak (60hz ? 1cyc) 20 junction temperature 150 reverse voltage (dc) 200 average rectified forward current (*1) 1 parameter limits reverse voltage (repetitive) 200 pmds 2.0 4.2 2.0 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max rohm : pmds jedec : sod-106 manufacture date 6 6 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 1/3 2011.05 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rf101l2s 0 5 10 15 20 25 30 ave:12.2ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) f=1mhz 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 800 900 ta=150 ta=25 ta=-25 ta=75 ta=125 0.01 0.1 1 10 100 1000 10000 0 50 100 150 200 ta=150 ta=25 ta=-25 ta=75 ta=125 1 10 100 0 5 10 15 20 25 30 f=1mhz 0 10 20 30 40 50 60 70 80 90 100 ave:37.0pf ta=25 f=1mhz vr=0v n=10pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=200v n=30pcs ave:11.1na 0 50 100 150 200 ave:63.0a 8.3ms ifsm 1cyc forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics 0 0.5 1 1.5 2 00.511.52 sin( ?180) d=1/2 dc vf dispersion map forward voltage:vf(mv) 800 810 820 830 840 850 ave:818.6mv ta=25 if=1a n=30pcs 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1m if=100ma 300u t ime mounted on epoxy board im=10ma 1 10 100 1000 1 10 100 8.3ms ifsm 1cyc 8.3ms 1 10 100 1000 1 10 100 t ifsm 2/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf101l2s electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k c=200pf r=0 ave:13.6kv ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 1 2 3 0 25 50 75 100 125 150 t d=t/ t v t tj=150 d=t/t t vr io vr=100v 0a 0v dc d=1/2 sin( 180) 0 1 2 3 0 255075100125150 t t 0 0 t tj=150 d=t/t t vr io vr=100v 0a 0v dc d=1/2 sin( ?180) 3/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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